Effect of Dielectric Variations on Performance of Carbon Nanotube Field Effect Transistor Based Basic Logic Gates
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چکیده
منابع مشابه
Effect of Dielectric Variations on Performance of Carbon Nanotube Field Effect Transistor Based Basic Logic Gates
The continuous scaling down of feature size in Silicon technology has resulted in several technological and fundamental hindrances. The researchers started to look for new nanoscale devices those can replace CMOS transistors in digital circuits. The nanowire transistor, FinFET, Carbon Nanotube field effect transistor (CNFET), tunnel field effect transistor (TFET), and single electron transistor...
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Carbon Nanotube Field Effect Transistors (CNFETs) are being widely studied as the possible alternatives to the conventional silicon-MOSFETs. In this paper we have successfully designed the CNFET-based digital logic gates and compared them with the existing CMOS technology based logic gates. The designs are modeled using 32-nm technology for both CNFET and CMOS technology, using Stanford Univers...
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Copyright 2011 KIEEME. All rights reserved. This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted noncommercial use, distribution, and reproduction in any medium, provided the original work is properly cited. pISSN: 1229-7607 eISSN: 2092-7592 DOI: http://dx...
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ژورنال
عنوان ژورنال: IOSR Journal of VLSI and Signal Processing
سال: 2016
ISSN: 2319-4197,2319-4200
DOI: 10.9790/4200-0604027884